• Company
• About Us
• Process Capability - Technology Platforms
  • Diffusion/Deposition (6")
  • Diffusion, Thin Films & Implant
  • PECVD
  • Physical Vapour Deposition
  • PVD- Fab3
  • Implant (4" & 6" capability)
  • Dry Isotropic Etch
  • Wafer Bonding
  • Plasma Etch (6")
  • Photo Lithography
  • Metrology
  • Wet Chemical Etch
  • Deep Reactive Ion Etching (DRIE)
• Quality Assurance
• Who We Work With
• Board
• Business Team

Deep Reactive Ion Etching (DRIE)

• Deep silicon etch (Bosch process)
• Through-wafer etching for membrane structures
• Trench etching to stop on SOI
• Double side SOI processing stopping on Buried Oxide from both sides.
• Very high selectivity to oxide
• Varying wall smoothness and aspect ratios
• High Etch rates achievable depending on open areas.

Spin on Coatings

• Resists, including lift off resist for metal patterning
• Photo definable Polyimide for Passivation Layers
• Sacrificial Polyimide for MEMS structuring.
• Thick resist processing for DRIE and etching sacrificial layers.

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