Photo Lithography

Photo

Fab3 - 6" MOS/Bipolar:

  • 6" Projection aligner with 1.5µm resolution
  • 6" I-Line Stepper with 0.8µm resolution
  • 6" Front to back alignment system with 5µm resolution and front to back alignment accuracy of ± 2µm

Fab1 - 4" MOS/Bipolar:

  • 4" Projection mask exposure to 2µm feature size'
  • 4" Front to back alignment system with 5µm resolution and front to back alignment accuracy of ±2µm
  • 4" Proximity mask exposure to 5µm feature size with capability to align to features on the opposite side of the wafer (double side align) to an accuracy of ±5µm.

Fab2 - 4" & 6" MEMS:

  • 4" & 6" projection mask exposure to 2µm feature size
  • 4" & 6" Proximity mask exposure to 5µm feature size with capability to align to features on the opposite side of the wafer (double side align) to an accuracy of ±5µm
  • 6" I-Line Stepper with 0.8µm resolution (available March 2011)

News

SEMEFAB ARE NOW RECRUITING

30 Apr 2013

Semefab will be exhibiting at the MEMS UK exhibiton at

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Semicon China

06 Mar 2013

Semefab will be exhibiting at the MEMS UK exhibiton at

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Allan James

22 Oct 2012

Semefab will be exhibiting at the MEMS UK exhibiton at

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