• Company
• About Us
• Process Capability - Technology Platforms
  • Diffusion/Deposition (6")
  • Diffusion, Thin Films & Implant
  • PECVD
  • Physical Vapour Deposition
  • PVD- Fab3
  • Implant (4" & 6" capability)
  • Dry Isotropic Etch
  • Wafer Bonding
  • Plasma Etch (6")
  • Photo Lithography
  • Metrology
  • Wet Chemical Etch
  • Deep Reactive Ion Etching (DRIE)
• Quality Assurance
• Who We Work With
• Board
• Business Team

Photo Lithography

Fab3 - 6" MOS/Bipolar:

• 6" Projection aligner with 1.5µm resolution
• 6" I-Line Stepper with 0.8µm resolution
• 6" Front to back alignment system with 5µm resolution and front to back alignment accuracy of ± 2µm

Fab1 - 4" MOS/Bipolar:

• 4" Projection mask exposure to 2µm feature size'
• 4" Front to back alignment system with 5µm resolution and front to back alignment accuracy of ±2µm
• 4" Proximity mask exposure to 5µm feature size with capability to align to features on the opposite side of the wafer (double side align) to an accuracy of ±5µm.

Fab2 - 4" & 6" MEMS:

• 4" & 6" projection mask exposure to 2µm feature size
• 4" & 6" Proximity mask exposure to 5µm feature size with capability to align to features on the opposite side of the wafer (double side align) to an accuracy of ±5µm
• 6" I-Line Stepper with 0.8µm resolution (available March 2011)

News