Diffusion, Thin Films & Implant

CMOS and Bipolar technologies fabrication on 100mm wafers (150mm by July 2010), PiN diode processes with low leakage characteristics and Low Noise JFET processes.

• Diffusion up to 1250C (using SiC furnace tubes) with expertise on maintaining high bulk silicon lifetime during processing.
• P type (Boron) doping processes either by Boron Discs, BBR3 or Boron Implantation.
• N type (Phosphorous ,Arsenic and Antimony) doping processes either by furnace (phos only) or implant
• LPCVD polysilicon for gate electrodes, resistors (to 1000 ohms/sq), poly to poly capacitors,  trench fill, and sacrificial layers for MEMS. Low temperature option to ensure smooth surfaces.
• LPCVD Nitride for LOCOS, capacitor dielectrics, MEMS membranes and Masking layers
• PECVD (low temperature) Oxide, Oxynitride and Nitride for inter level dielectric (ILD), circuit passivation, stress controlled (tensile and compressive) for thin membrane MEMS applications, and as sacrificial layers for MEMS.