Deep Reactive Ion Etching (DRIE)

Advanced STS Pegasus DRIE System

• Deep silicon etch (Bosch process)
• Through-wafer etching for membrane structures
• Trench etching to stop on SOI
• Double side SOI processing stopping on Buried Oxide from both sides.
• Very high selectivity to oxide
• Varying wall smoothness and aspect ratios
• High Etch rates achievable depending on open areas.