Photo Lithography

• Projection mask exposure to 2µm feature size
• Proximity mask exposure to 5µm feature size with capability to align to features on the opposite side of the wafer to an accuracy of +/-5µm (Double Side Align)
• I-line Stepper photolith to 0.5µm on 150mm wafers only
  • Presently available for Non CMOS applications
  • Available in July 2010 for CMOS compatible processes