All processes for CMOS and Bipolar technologies on 4 inch and 6 inch (July 2008)

• Diffusion to 1250C (SiC furnaces) with expertise on maintaining high bulk silicon lifetime
• P type (Boron) and N type (Phosphorous, Arsenic) furnace or implant doping
• LPCVD polysilicon for gate electrodes, resistors (to 1000 ohms/sq), trench fill, and sacrificial layers for MEMS
• LPCVD Nitride for LOCOS, capacitor dielectrics, and MEMS membranes
• PECVD (low temperature) Oxide, Oxynitride and Nitride for inter level dielectric (ILD), circuit passivation, stress controlled (tensile and compressive) for thin membrane MEMS applications, and as sacrificial layers for MEMS